Estimating lateral straggling of boron profiles ion implanted into crystalline silicon with a tilt angle of 0 deg using off-angle substrates

Boron was ion implanted into /spl theta/ deg off-angle crystalline silicon substrates with a tilt angle of /spl theta/ deg . It is assumed that the B profiles along the ion-beam direction are identical, enabling the lateral straggling of B ion implanted with a tilt angle of 0/spl deg/ to be evaluated experimentally for the first time. The measurements show that the lateral straggling of channeling ions is small.