A wideband low noise amplifiers design incorporating the CMRC circuitry

An impedance bandwidth enhancement technique for tuning a low noise amplifier (LNA) is presented. With the use of the compact microstrip resonant cell (CMRC) at the emitter pins of a bipolar junction transistor (BJT), the impedance bandwidth achieved is about 95%, for a simple single stage amplifier...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2005-05, Vol.15 (5), p.315-317
Hauptverfasser:	Yang, S.-L.S., Quan Xue, Kwai-Man Luk
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Bandwidth Broadband amplifiers Circuit noise Circuit optimization Circuit properties Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Impedance Low-noise amplifier (LNA) Low-noise amplifiers Microstrip microwave amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Noise figure Oscillators, resonators, synthetizers Pins Resonance
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Beschreibung
Zusammenfassung:	An impedance bandwidth enhancement technique for tuning a low noise amplifier (LNA) is presented. With the use of the compact microstrip resonant cell (CMRC) at the emitter pins of a bipolar junction transistor (BJT), the impedance bandwidth achieved is about 95%, for a simple single stage amplifier design. The LNA attains a gain of about 15 dB; also a low noise figure of 1.16 dB at 2.1GHz and an average noise figure of about 1.5 dB across the operation bands have been achieved.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2005.847667