Brush plated CdSe films on high temperature substrates

CdSe is a direct band gap semiconductor belonging to the II-VI group and possessing excellent optoelectronic properties. Thin film transistors and image intensifier tubes have been fabricated with this material. It is also a very stable photo anode in wet photovoltaic cells. Several physical and chemical techniques are available for the growth of thin films of CdSe. Though results on brush plated CdSe films have been reported earlier, the films were deposited on room temperature substrates. To our knowledge, this is the first report on CdSe films grown by the brush plating technique on substrates maintained at higher temperatures. CdSe films were brush plated on to titanium and conducting glass substrates maintained at different temperatures in the range 30-90DGC.