Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 deg C to 280/spl deg/ C

Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (T/sub g/) of > 315 deg C and low coefficient of thermal expansion of < 10 ppm/ deg C. Maximum process temperatures on the substrates were 250 deg C and 280 deg C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280 deg C have dc characteristics comparable to TFTs made on glass. The stability of the 250 deg C TFTs on clear plastic is approaching that of TFTs made on glass at 300 deg C-350 deg C. TFT characteristics and stability depend only on process temperature and not on substrate type.