Enhanced Interfacial and Dielectric Performance for Polyetherimide Nanocomposites through Tailoring Shell Polarities

Polyimide (PI) and its derivative polyetherimide (PEI) have been widely investigated as promising candidates for dielectric energy storage due to their excellent intrinsic features. However, most of the current research for PI- or PEI-based dielectric nanocomposites only focuses on a certain polar g...

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Veröffentlicht in:ACS applied materials & interfaces 2023-05, Vol.15 (19), p.23792-23803
Hauptverfasser: Zuo, Peiyuan, Jiang, Junhao, Chen, Donglin, Lin, Jingyu, Zhao, Zhanpeng, Sun, Bowen, Zhuang, Qixin
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Sprache:eng
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Zusammenfassung:Polyimide (PI) and its derivative polyetherimide (PEI) have been widely investigated as promising candidates for dielectric energy storage due to their excellent intrinsic features. However, most of the current research for PI- or PEI-based dielectric nanocomposites only focuses on a certain polar group contained in a dianhydride monomer, while there are very few studies on exploring the effect of a series of polar groups derived from various dianhydride monomers on the dielectric properties of nanocomposites. To fill this gap, we herein fabricated and investigated a series of novel hyperbranched polyimides grafted on barium titanate nanoparticles (HBPI@BT) using different dianhydride monomers and their nanocomposites with the PEI matrix. The results showed that sophisticated hyperbranched structures effectively alleviated the incompatibility between fillers and the matrix, thus significantly improving the bonding energy of nanocomposites, especially for HBPI-S@BT/PEI (797.7 kJ/mol). The U d of HBPI-S@BT/PEI reached 8.38 J/cm3, which is 3.3 times higher than that of pure PEI. The HBPI-F@BT/PEI nanocomposites achieved high breakdown strength (∼500 MV/m) and low dielectric loss (0.008) simultaneously. The dielectric constants of HBPI@BT/PEI nanocomposites remained at a stable level from 25 to 150 °C. This work provides us promising hyperbranched structured materials for potentially advanced dielectric applications such as field effect transistors.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.3c03319