Volume and grain boundary diffusivity of boron in polycrystalline silicon during rapid thermal annealing
The diffusion of boron and arsenic from polycrystalline silicon into single crystal silicon during rapid thermal annealing (RTA) at temperature between 1000 and 1150 deg C for 20 s has been investigated. Samples were characterised by secondary ion mass spectrometry (SIMS). The volume and intergranul...
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| Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2003-09, Vol.B102 (1-3), p.257-261 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The diffusion of boron and arsenic from polycrystalline silicon into single crystal silicon during rapid thermal annealing (RTA) at temperature between 1000 and 1150 deg C for 20 s has been investigated. Samples were characterised by secondary ion mass spectrometry (SIMS). The volume and intergranular diffusion coefficient has been deduced from the boron profiles. Depth profiles are analysed using the Suzuoka model. It is established that the grain boundary diffusivities are two to three times larger than the volume diffusivities. |
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| ISSN: | 0921-5107 |