Vacuum-annealed undoped polycrystalline CVD diamond: a new electrode material
Vacuum-annealing imparts conductivity to initially insulating undoped polycrystalline chemical–vapor-deposited diamond, thus turning it to a possible electrode material. The diamond film annealed at 1775 K appeared to be practically not conducting. With further increase in the annealing temperature...
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Veröffentlicht in: | Electrochimica acta 2003-12, Vol.49 (1), p.41-49 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Vacuum-annealing imparts conductivity to initially insulating undoped polycrystalline chemical–vapor-deposited diamond, thus turning it to a possible electrode material. The diamond film annealed at 1775
K appeared to be practically not conducting. With further increase in the annealing temperature above 1825
K, the film effective resistivity decreased from initial value of 10
11 to 10
12
Ω
cm down to less than 0.1
Ω
cm; the differential capacitance increased from ∼10
−3 to ∼50
μF per 1
cm
2 of geometrical surface; the transfer coefficients for electrochemical reactions in the [Fe(CN)
6]
3−/4− redox solution increased from ∼0.2 to 0.5; and the degree of reversibility of the electrochemical reaction increased. The observed changes in the electrode properties are attributed to gradual change in the thickness and/or properties (first and foremost, conductivity) of the nondiamond carbon phase formed along the intercrystallite boundaries upon the annealing; the conducting phase is outcropping at the film surface as an array of microelectrodes (“active sites”). |
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ISSN: | 0013-4686 1873-3859 |
DOI: | 10.1016/j.electacta.2003.05.005 |