Traps at the Interface of 3C-SiC/SiO2-MOS-Structures

Conductance method and admittance spectroscopy are employed to monitor traps at the interface of differently processed 3C- and 4H-SiC/SiO2 MOS capacitors. It is demonstrated that oxidation of 3C-SiC under NO-ambient leads to low values of the density of interface states in the entire SiC band gap.

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Bibliographische Detailangaben
Veröffentlicht in:	Materials science forum 2003-09, Vol.433-436, p.551-554
Hauptverfasser:	Dimitrijev, Sima, Wagner, Günter, Ciobanu, Florin, Schöner, Adolf, Nagasawa, Hiroyuki, Cheong, K.Y., Afanas'ev, Valeri V., Pensl, Gerhard
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Conductance method and admittance spectroscopy are employed to monitor traps at the interface of differently processed 3C- and 4H-SiC/SiO2 MOS capacitors. It is demonstrated that oxidation of 3C-SiC under NO-ambient leads to low values of the density of interface states in the entire SiC band gap.
ISSN:	0255-5476 1662-9752 1662-9752
DOI:	10.4028/www.scientific.net/MSF.433-436.551