Heterosynaptic MoS2 Memtransistors Emulating Biological Neuromodulation for Energy‐Efficient Neuromorphic Electronics

Heterosynaptic neuromodulation is a key enabler for energy‐efficient and high‐level biological neural processing. However, such manifold synaptic modulation cannot be emulated using conventional memristors and synaptic transistors. Thus, reported herein is a three‐terminal heterosynaptic memtransistor using an intentional‐defect‐generated molybdenum disulfide channel. Particularly, the defect‐mediated space‐charge‐limited conduction in the ultrathin channel results in memristive switching characteristics between the source and drain terminals, which are further modulated using a gate terminal according to the gate‐tuned filling of trap states. The device acts as an artificial synapse controlled by sub‐femtojoule impulses from both the source and gate terminals, consuming lower energy than its biological counterpart. In particular, electrostatic gate modulation, corresponding to biological neuromodulation, additionally regulates the dynamic range and tuning rate of the synaptic weight, independent of the programming (source) impulses. Notably, this heterosynaptic modulation not only improves the learning accuracy and efficiency but also reduces energy consumption in the pattern recognition. Thus, the study presents a new route leading toward the realization of highly networked and energy‐efficient neuromorphic electronics. Heterosynaptic MoS2 memtransistors are developed to enable tunable synaptic plasticity by applying paired voltage pulses at the drain and gate terminals serving as presynaptic neurons and neuromodulators, respectively, for energy‐efficient neuromorphic electronics. Consequently, a SET voltage of 2.0 V and sub‐1 fJ energy consumption are achieved, which are the best recorded values for three‐terminal synaptic devices reported so far.