X-ray absorption studies of atomic environments in semiconductor nanostructures

X-ray absorption studies of atomic environments in semiconductor nanostructures

The use of X-ray absorption fine structure spectroscopy in the investigation of the atomic environment in semiconductor nanostructures is illustrated. After a description of the experimental apparatus two specific examples are reported: the detection of Si–Ge intermixing in Ge quantum dots and the r...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2003, Vol.199 (Complete), p.169-173
1. Verfasser: Boscherini, F.
Format: Artikel
Sprache:eng
Schlagworte:
Quantum dots
Semiconductors
Strain
X-ray absorption spectroscopy
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Zusammenfassung:The use of X-ray absorption fine structure spectroscopy in the investigation of the atomic environment in semiconductor nanostructures is illustrated. After a description of the experimental apparatus two specific examples are reported: the detection of Si–Ge intermixing in Ge quantum dots and the relation between long range elasticity and local distortions in strained InGaAs epilayers.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(02)01560-4