Time resolved study of laser diode characteristics during pulsed operation

Under pulsed operation, time dependent spectral and electro‐optical measurements on GaN‐based laser diodes show a considerable red shift in the emission wavelength and a decreasing voltage drop across the device. These changes appear on a rather short time scale in the microsecond range. During a 3....

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Veröffentlicht in:	Physica status solidi. C 2003-01 (7), p.2283-2286
Hauptverfasser:	Eichler, Christoph, Schad, Sven‐Silvius, Seyboth, Matthias, Habel, Frank, Scherer, Marcus, Miller, Stephan, Weimar, Andreas, Lell, Alfred, Härle, Volker, Hofstetter, Daniel
Format:	Artikel
Sprache:	eng
Schlagworte:	42.55.Px 44.05.+e
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Under pulsed operation, time dependent spectral and electro‐optical measurements on GaN‐based laser diodes show a considerable red shift in the emission wavelength and a decreasing voltage drop across the device. These changes appear on a rather short time scale in the microsecond range. During a 3.7 microsecond long pulse, a temperature increase of approximately 50 K is obtained using different experimental methods. This value agrees well with numerical simulations based on the thermal properties of the material. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1610-1634 1610-1642
DOI:	10.1002/pssc.200303296