Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates

Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates

Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typic...

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Veröffentlicht in:IEEE photonics technology letters 2005-02, Vol.17 (2), p.288-290
Hauptverfasser: Wuu, D.S., Wang, W.K., Shih, W.C., Horng, R.H., Lee, C.E., Lin, W.Y., Fang, J.S.
Format: Artikel
Sprache:eng
Schlagworte:
Electroluminescence
Emission
Epitaxial layers
Etching
Extraction
Gallium nitride
GaN
InGaN
Light emitting diodes
light-emitting diode (LED)
Liquid crystal displays
Lithography
Materials science and technology
near ultraviolet (UV)
patterned sapphire substrate (PSS)
Power generation
Quantum efficiency
Quantum well devices
Sapphire
Substrates
Threading dislocations
Wavelengths
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Zusammenfassung:Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The improvement in the light intensity could be attributed to the decrease of threading dislocations and the increase of light extraction efficiency in the horizontal direction using a PSS.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2004.839012