Performance of a Schottky surface barrier radiation detector based on bulk undoped semi-insulating GaAs at reduced temperature

Performance of a Schottky surface barrier radiation detector based on bulk undoped semi-insulating GaAs at reduced temperature

This work presents the performance of a radiation detector based on LEC semi-insulating GaAs with Au/Zn Schottky contact at variable temperature. The roles of the shaping time of a linear amplifier and operating voltage were studied. The performance of the radiation detector was calculated from puls...

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Veröffentlicht in:IEEE transactions on nuclear science 2006-04, Vol.53 (2), p.625-629
Hauptverfasser: Zat'ko, B., Dubecky, F.
Format: Artikel
Sprache:eng
Schlagworte:
Charge carriers
Energy resolution
Gallium arsenide
Pulse amplifiers
Radiation detector
Radiation detectors
Schottky barrier
Schottky barriers
semi-insulating GaAs
Semiconductor device noise
Silicon radiation detectors
Spectroscopy
Temperature
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Zusammenfassung:This work presents the performance of a radiation detector based on LEC semi-insulating GaAs with Au/Zn Schottky contact at variable temperature. The roles of the shaping time of a linear amplifier and operating voltage were studied. The performance of the radiation detector was calculated from pulse height spectra of 59.5 keV (/sup 241/Am) and 122.1 keV (/sup 57/Co). The optimal reverse bias voltage of the radiation detector, shaping time of the linear amplifier and temperature of detector were investigated. The best charge collection efficiency of 98.2% at 303 K, relative energy resolution in FWHM 19.8% for 59.5 keV and 10.7% for 122.1 keV at 253 K were obtained.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2006.870446