Low-temperature electron mobility in Trigate SOI MOSFETs
Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the I/sub D/(V/sub G/) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High...
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| Veröffentlicht in: | IEEE electron device letters 2006-02, Vol.27 (2), p.120-122 |
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| container_title | IEEE electron device letters |
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| creator | Colinge, J.-P. Quinn, A.J. Floyd, L. Redmond, G. Alderman, J.C. Weize Xiong Cleavelin, C.R. Schulz, T. Schruefer, K. Knoblinger, G. Patruno, P. |
| description | Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the I/sub D/(V/sub G/) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm/sup 2//Vs, is measured in the subbands at T=4.4 K. Subband mobility decreases as temperature is increased. Conduction in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q. |
| doi_str_mv | 10.1109/LED.2005.862691 |
| format | Article |
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These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm/sup 2//Vs, is measured in the subbands at T=4.4 K. Subband mobility decreases as temperature is increased. Conduction in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2005.862691</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Charge carrier mobility ; Conduction heating ; Cryogenic electronics ; Drains ; Electric potential ; Electron mobility ; Electronics ; Etching ; Exact sciences and technology ; Filling ; Gates ; MOSFETs ; Oscillations ; quantum wires ; Semiconductor device measurement ; semiconductor device measurements ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductor films ; Silicon on insulator technology ; silicon-on -insulator (SOI) technology ; Temperature ; Transistors ; Voltage</subject><ispartof>IEEE electron device letters, 2006-02, Vol.27 (2), p.120-122</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c447t-394b4ee25f086f441b6fed549026842e20372f45b5ace1351319b6849c37869e3</citedby><cites>FETCH-LOGICAL-c447t-394b4ee25f086f441b6fed549026842e20372f45b5ace1351319b6849c37869e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1580601$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1580601$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17445794$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Colinge, J.-P.</creatorcontrib><creatorcontrib>Quinn, A.J.</creatorcontrib><creatorcontrib>Floyd, L.</creatorcontrib><creatorcontrib>Redmond, G.</creatorcontrib><creatorcontrib>Alderman, J.C.</creatorcontrib><creatorcontrib>Weize Xiong</creatorcontrib><creatorcontrib>Cleavelin, C.R.</creatorcontrib><creatorcontrib>Schulz, T.</creatorcontrib><creatorcontrib>Schruefer, K.</creatorcontrib><creatorcontrib>Knoblinger, G.</creatorcontrib><creatorcontrib>Patruno, P.</creatorcontrib><title>Low-temperature electron mobility in Trigate SOI MOSFETs</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the I/sub D/(V/sub G/) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm/sup 2//Vs, is measured in the subbands at T=4.4 K. Subband mobility decreases as temperature is increased. Conduction in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q.</description><subject>Applied sciences</subject><subject>Charge carrier mobility</subject><subject>Conduction heating</subject><subject>Cryogenic electronics</subject><subject>Drains</subject><subject>Electric potential</subject><subject>Electron mobility</subject><subject>Electronics</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Filling</subject><subject>Gates</subject><subject>MOSFETs</subject><subject>Oscillations</subject><subject>quantum wires</subject><subject>Semiconductor device measurement</subject><subject>semiconductor device measurements</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor films</subject><subject>Silicon on insulator technology</subject><subject>silicon-on -insulator (SOI) technology</subject><subject>Temperature</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kM1Lw0AQxRdRsFbPHrwEQT2lnf3M7lFq1UKlh9bzsokTSUmTupsg_e_d0oLgwdPAzO-9xzxCrimMKAUznk-fRgxAjrRiytATMqBS6hSk4qdkAJmgKaegzslFCGsAKkQmBkTP2--0w80Wvet6jwnWWHS-bZJNm1d11e2SqklWvvp0HSbLxSx5Wyyfp6twSc5KVwe8Os4heY_ryWs6X7zMJo_ztIgBXcqNyAUikyVoVQpBc1XihxQGmNKCIQOesVLIXLoCKZeUU5PHiyl4ppVBPiQPB9-tb796DJ3dVKHAunYNtn2w2ihGTRRE8v5fkmngmisRwds_4LrtfRO_sIYyMCIyERofoMK3IXgs7dZXG-d3loLdF25j4XZfuD0UHhV3R1sXCleX3jVFFX5lmRAyM_v4mwNXIeLvWWpQQPkPeeOFGg</recordid><startdate>20060201</startdate><enddate>20060201</enddate><creator>Colinge, J.-P.</creator><creator>Quinn, A.J.</creator><creator>Floyd, L.</creator><creator>Redmond, G.</creator><creator>Alderman, J.C.</creator><creator>Weize Xiong</creator><creator>Cleavelin, C.R.</creator><creator>Schulz, T.</creator><creator>Schruefer, K.</creator><creator>Knoblinger, G.</creator><creator>Patruno, P.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. 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These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm/sup 2//Vs, is measured in the subbands at T=4.4 K. Subband mobility decreases as temperature is increased. Conduction in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2005.862691</doi><tpages>3</tpages></addata></record> |
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| subjects | Applied sciences Charge carrier mobility Conduction heating Cryogenic electronics Drains Electric potential Electron mobility Electronics Etching Exact sciences and technology Filling Gates MOSFETs Oscillations quantum wires Semiconductor device measurement semiconductor device measurements Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films Silicon on insulator technology silicon-on -insulator (SOI) technology Temperature Transistors Voltage |
| title | Low-temperature electron mobility in Trigate SOI MOSFETs |
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