Low-temperature electron mobility in Trigate SOI MOSFETs

Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the I/sub D/(V/sub G/) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High...

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Veröffentlicht in:	IEEE electron device letters 2006-02, Vol.27 (2), p.120-122
Hauptverfasser:	Colinge, J.-P., Quinn, A.J., Floyd, L., Redmond, G., Alderman, J.C., Weize Xiong, Cleavelin, C.R., Schulz, T., Schruefer, K., Knoblinger, G., Patruno, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Charge carrier mobility Conduction heating Cryogenic electronics Drains Electric potential Electron mobility Electronics Etching Exact sciences and technology Filling Gates MOSFETs Oscillations quantum wires Semiconductor device measurement semiconductor device measurements Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films Silicon on insulator technology silicon-on -insulator (SOI) technology Temperature Transistors Voltage
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Beschreibung
Zusammenfassung:	Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the I/sub D/(V/sub G/) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm/sup 2//Vs, is measured in the subbands at T=4.4 K. Subband mobility decreases as temperature is increased. Conduction in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2005.862691