A highly linear double balanced Schottky diode S-band mixer

A highly linear double balanced Schottky diode S-band mixer

A high-level double balanced SiC Schottky diode mixer in SiC monolithic microwave integrated circuit (MMIC) technology has been designed, processed and characterized. The mixer is a single ended in- and output circuit with coupled transformers as baluns to enable a compact design, resulting in a tot...

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Veröffentlicht in:IEEE microwave and wireless components letters 2006-06, Vol.16 (6), p.336-338
Hauptverfasser: Sudow, M., Andersson, K., Nilsson, P.-A., Rorsman, N.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Balancing
Baluns
Circuit properties
Conversion
Coupling circuits
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
High linearity
Integrated circuit technology
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave integrated circuits
Microwave technology
Microwaves
Mixers
MMICs
Monolithic integrated circuits
Noise levels
Process design
Schottky
Schottky diodes
SiC monolithic microwave integrated circuit (MMIC)
Silicon carbide
Transformers
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Zusammenfassung:A high-level double balanced SiC Schottky diode mixer in SiC monolithic microwave integrated circuit (MMIC) technology has been designed, processed and characterized. The mixer is a single ended in- and output circuit with coupled transformers as baluns to enable a compact design, resulting in a total area of 2.2/spl times/2.2mm/sup 2/. The mixer has a maximum IIP/sub 3/ of 38dBm and IIP/sub 2/ of 58dBm at 3.3GHz, and a typical P/sub 1 dB/ of 23dBm in the S-band. The minimum conversion loss was 12dBm at 2.4GHz. The high power operation of the mixer shows that SiC MMIC can perform well in high microwave radiation environments.
ISSN:1531-1309
2771-957X
1558-1764
1558-1764
2771-9588
DOI:10.1109/LMWC.2006.875625