The possibilities of using semi-insulating CdTe crystals as detecting material for X-ray imaging radiography

In this work techniques for producing large uniform semi‐insulating detector‐grade CdTe crystals which are free of major structural defects (such as twins, non‐uniform dislocation density, and precipitates) have been successfully developed. These p‐type CdTe crystals have low carrier concentrations and resistivities of 108–109 Ω cm. From such materials photo diodes as X‐ray detectors can be designed with low leakage current, low capacitance, high speed, and high quantum efficiency.