Transmission electron microscopy study of Au/ZrB2/Ag(Te) contacts to GaSb

Transmission electron microscopy study of Au/ZrB2/Ag(Te) contacts to GaSb

By means of cross-sectional transmission electron microscopy (TEM) the influence of the annealing temperature on the morphology of Au/ZrB2/Ag(Te) ohmic contacts to (100)-oriented tellurium-doped GaSb substrates has been investigated. Both the shape and the size of the Ag(Te) grains significantly var...

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Veröffentlicht in:Materials chemistry and physics 2003-08, Vol.81 (2-3), p.260-264
Hauptverfasser: Kątcki, J., Łaszcz, A., Ratajczak, J., Phillipp, F., Guziewicz, M., Piotrowska, A.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Condensed matter: structure, mechanical and thermal properties
Electron, ion, and scanning probe microscopy
Exact sciences and technology
Interfaces
Ohmic contacts
Physics
Semiconductors
Structure of solids and liquids
crystallography
TEM
Thin films
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Zusammenfassung:By means of cross-sectional transmission electron microscopy (TEM) the influence of the annealing temperature on the morphology of Au/ZrB2/Ag(Te) ohmic contacts to (100)-oriented tellurium-doped GaSb substrates has been investigated. Both the shape and the size of the Ag(Te) grains significantly varied with the annealing temperature. In the sample annealed at 250°C, below the Ag(Te)/GaSb interface, dissolution pits (DPs) were formed. At the higher annealing temperatures the DP’s were not found. After annealing at 300°C, changes in the Ag(Te) grains located close to the interface can be seen. These changes were not observed in the sample annealed at 350°C. In all samples the annealing caused the formation of microtwins.
ISSN:0254-0584
1879-3312
DOI:10.1016/S0254-0584(02)00597-7