High-performance single-mode VCSELs in the 1310-nm waveband

High-performance single-mode VCSELs in the 1310-nm waveband

High-performance vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1310-nm waveband are fabricated by bonding AlGaAs-GaAs distributed Bragg reflectors on both sides of a InP-based cavity. A 2-in wafer bonding process is optimized to produce very good on-wafer device parameter uniformi...

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Veröffentlicht in:IEEE photonics technology letters 2005-05, Vol.17 (5), p.947-949
Hauptverfasser: Iakovlev, V., Suruceanu, G., Caliman, A., Mereuta, A., Mircea, A., Berseth, C.-A., Syrbu, A., Rudra, A., Kapon, E.
Format: Artikel
Sprache:eng
Schlagworte:
Bonding
Bragg reflectors
Contact
Distributed Bragg reflectors
Emittance
Etching
Holes
Mirrors
Modulation
Power generation
Surface emitting lasers
Surface waves
Temperature distribution
Tunnel junctions
Vertical cavity surface emission lasers
Vertical cavity surface emitting lasers
Voltage
Wafer bonding
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Beschreibung
Zusammenfassung:High-performance vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1310-nm waveband are fabricated by bonding AlGaAs-GaAs distributed Bragg reflectors on both sides of a InP-based cavity. A 2-in wafer bonding process is optimized to produce very good on-wafer device parameter uniformity. Carrier injection is implemented via double intracavity contact layers and a tunnel junction. A 1.2-mW single-mode output power is obtained in the temperature range of 20/spl deg/C-80/spl deg/C. Modulation capability at 3.2 Gb/s is demonstrated up to 70/spl deg/C. Overall VCSEL performance complies with the requirements of the 10 GBASE-LX4 IEEE.802.3ae standard, which opens the way for novel applications of VCSELs emitting in the 1310-nm band.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2005.845654