Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels

The hole mobilities of SiGe and SiGeC channel pMOSFETs fabricated on ultrathin silicon-on-insulator substrates are investigated and compared with reference Si channel devices. The total thickness of the fully depleted Si/SiGe(C)/Si body structure is /spl sim/ 25 nm. All devices demonstrated a near i...

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Veröffentlicht in:	IEEE electron device letters 2006-06, Vol.27 (6), p.466-468
Hauptverfasser:	Hallstedt, J., von Haartman, M., Hellstrom, P.-E., Ostling, M., Radamsson, H.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Boron Channels CMOS technology Compound structure devices Condensed matter physics Depletion Design. Technologies. Operation analysis. Testing Devices Doping profiles Electronics Exact sciences and technology Fabrication Fully depleted (FD) Fysik Germanium silicon alloys Halvledarfysik Heterojunction bipolar transistors heterostructure Hole mobility Integrated circuits Kondenserade materiens fysik mobility MOSFETs NATURAL SCIENCES NATURVETENSKAP Physics Scattering Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor physics SiGe SiGeC Silicon Silicon germanides Silicon germanium Silicon on insulator technology Silicon substrates silicon-on-insulator (SOI) technology Transistors
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Zusammenfassung:	The hole mobilities of SiGe and SiGeC channel pMOSFETs fabricated on ultrathin silicon-on-insulator substrates are investigated and compared with reference Si channel devices. The total thickness of the fully depleted Si/SiGe(C)/Si body structure is /spl sim/ 25 nm. All devices demonstrated a near ideal subthreshold behavior, and the drive current and mobility were increased with more than 60% for SiGe and SiGeC channels. When comparing SIMOX and UNIBOND substrates, no significant difference could be detected.
ISSN:	0741-3106 1558-0563 1558-0563
DOI:	10.1109/LED.2006.874763