Charge-based capacitance measurement for bias-dependent capacitance

In this letter, charge-based capacitance measurement (CBCM) is applied to characterize bias-dependent capacitances in a CMOS transistor. Due to its special advantage of being free from the errors induced by charge injection, the operation of charge-injection-induced-error-free CBCM allows for the ex...

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Veröffentlicht in:	IEEE electron device letters 2006-05, Vol.27 (5), p.390-392
Hauptverfasser:	Chang, Yao-Wen, Chang, Hsing-Wen, Lu, Tao-Cheng, King, Ya-Chin, Ting, Wenchi, Ku, Yen-Hui Joseph, Lu, Chih-Yuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Capacitance measurement Capacitors charge based Charge measurement charge-based capacitance measurement (CBCM) CMOS Current measurement Devices effective channel length Extraction Gates Integrated circuit interconnections Integrated circuit measurements Inversions Length measurement MOSFET capacitor MOSFET circuits MOSFETs Parasitic capacitance Permissible error Testing
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