Charge-based capacitance measurement for bias-dependent capacitance

Charge-based capacitance measurement for bias-dependent capacitance

In this letter, charge-based capacitance measurement (CBCM) is applied to characterize bias-dependent capacitances in a CMOS transistor. Due to its special advantage of being free from the errors induced by charge injection, the operation of charge-injection-induced-error-free CBCM allows for the ex...

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Veröffentlicht in:IEEE electron device letters 2006-05, Vol.27 (5), p.390-392
Hauptverfasser: Chang, Yao-Wen, Chang, Hsing-Wen, Lu, Tao-Cheng, King, Ya-Chin, Ting, Wenchi, Ku, Yen-Hui Joseph, Lu, Chih-Yuan
Format: Artikel
Sprache:eng
Schlagworte:
Capacitance
Capacitance measurement
Capacitors
charge based
Charge measurement
charge-based capacitance measurement (CBCM)
CMOS
Current measurement
Devices
effective channel length
Extraction
Gates
Integrated circuit interconnections
Integrated circuit measurements
Inversions
Length measurement
MOSFET capacitor
MOSFET circuits
MOSFETs
Parasitic capacitance
Permissible error
Testing
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Beschreibung
Zusammenfassung:In this letter, charge-based capacitance measurement (CBCM) is applied to characterize bias-dependent capacitances in a CMOS transistor. Due to its special advantage of being free from the errors induced by charge injection, the operation of charge-injection-induced-error-free CBCM allows for the extraction of full-range gate capacitance from the accumulation region to the inversion region and the overlap capacitance of MOSFET devices with submicrometer dimensions.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.873368