Characterization of diode-pumped laser operation of a novel Yb:GSO Crystal
We report what is believed to be the first demonstration of the laser action of Yb/sup 3+/-doped Gd/sub 2/SiO/sub 5/ (Yb:GSO)crystal pumped by a 940-nm laser diode at room temperature. The threshold of laser generation is only 0.85 kW/cm/sup 2/, which is smaller than the theoretic threshold of Yb:YA...
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Veröffentlicht in: | IEEE journal of quantum electronics 2006-05, Vol.42 (5), p.517-521 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report what is believed to be the first demonstration of the laser action of Yb/sup 3+/-doped Gd/sub 2/SiO/sub 5/ (Yb:GSO)crystal pumped by a 940-nm laser diode at room temperature. The threshold of laser generation is only 0.85 kW/cm/sup 2/, which is smaller than the theoretic threshold of Yb:YAG (1.54 kW/cm/sup 2/). The laser wavelength is 1090 nm. With a 2.5% output coupler, the maximum output power is 415 mW under a pump power of 5W. By using the SESAM, the Q-switched modelocking and CW mode-locked operations are demonstrated. |
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ISSN: | 0018-9197 1558-1713 |
DOI: | 10.1109/JQE.2006.874060 |