Characterization of diode-pumped laser operation of a novel Yb:GSO Crystal

We report what is believed to be the first demonstration of the laser action of Yb/sup 3+/-doped Gd/sub 2/SiO/sub 5/ (Yb:GSO)crystal pumped by a 940-nm laser diode at room temperature. The threshold of laser generation is only 0.85 kW/cm/sup 2/, which is smaller than the theoretic threshold of Yb:YA...

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Veröffentlicht in:IEEE journal of quantum electronics 2006-05, Vol.42 (5), p.517-521
Hauptverfasser: Xue, Y., Wang, C., Liu, Q., Li, Y., Chai, L., Yan, C., Zhao, G., Su, L., Xu, X., Xu, J.
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Sprache:eng
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Zusammenfassung:We report what is believed to be the first demonstration of the laser action of Yb/sup 3+/-doped Gd/sub 2/SiO/sub 5/ (Yb:GSO)crystal pumped by a 940-nm laser diode at room temperature. The threshold of laser generation is only 0.85 kW/cm/sup 2/, which is smaller than the theoretic threshold of Yb:YAG (1.54 kW/cm/sup 2/). The laser wavelength is 1090 nm. With a 2.5% output coupler, the maximum output power is 415 mW under a pump power of 5W. By using the SESAM, the Q-switched modelocking and CW mode-locked operations are demonstrated.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2006.874060