Characterization and analysis of OFET devices based on TCAD simulations

Omega-field-effect transistor (OFET) devices, which feature an undoped cylindrical channel uniformly surrounded by a gate electrode, are investigated in this paper. The study is based on TCAD device simulations of OFETs with gate lengths ranging between 10 and 130 nm and radii ranging between 1 and...

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Veröffentlicht in:	IEEE transactions on electron devices 2005-09, Vol.52 (9), p.2034-2041
1. Verfasser:	Kenrow, J.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Channels CMOSFETs Compound structure devices Devices Drains Electrodes Electronics Exact sciences and technology FETs Field effect transistors Gates Leakage current Leakage currents MIS devices MOS devices MOSFETs Saturation Semiconductor device modeling semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Simulation Transistors
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Zusammenfassung:	Omega-field-effect transistor (OFET) devices, which feature an undoped cylindrical channel uniformly surrounded by a gate electrode, are investigated in this paper. The study is based on TCAD device simulations of OFETs with gate lengths ranging between 10 and 130 nm and radii ranging between 1 and 65 nm. Device characteristics such as the threshold voltage, the subthreshold swing, the drain saturation, and leakage current as well as drain-induced barrier lowering are discussed as functions of radii and gate lengths. Further, the influence of transversal and longitudinal size quantization effects in OFETs are investigated.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2005.854281