1.1-μm-range InGaAs VCSELs for high-speed optical interconnections

1.1-μm-range InGaAs VCSELs for high-speed optical interconnections

We have developed vertical-cavity surface-emitting lasers for optical interconnections operating at 1.07 mum. The active layers of the devices are InGaAs-GaAs multiple quantum-wells, which are suitable for high-speed operation and high reliability. The devices exhibit -3-dB modulation bandwidths up...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 2006-06, Vol.18 (12), p.1368-1370
Hauptverfasser: Suzuki, N., Hatakeyama, H., Tokutome, K., Fukatsu, K., Yamada, M., Anan, T., Tsuji, M.
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Distributed Bragg reflectors
Energy consumption
High-speed modulation
Indium gallium arsenide
Optical arrays
Optical interconnections
Power system interconnection
Semiconductor lasers
Surface emitting lasers
Vertical cavity surface emitting lasers
vertical-cavity surface-emitting lasers (VCSELs)
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have developed vertical-cavity surface-emitting lasers for optical interconnections operating at 1.07 mum. The active layers of the devices are InGaAs-GaAs multiple quantum-wells, which are suitable for high-speed operation and high reliability. The devices exhibit -3-dB modulation bandwidths up to 19 GHz and no degradation under 70degC, 1000-h automatic power control tests. Error-free 20-Gb/s operations were also achieved
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2006.877353