SYNTHESIS OF HfO2 WHISKERS BY CHEMICAL VAPOR DEPOSITION TECHNIQUE OPERATED UNDER ATMOSPHERIC PRESSURE

HfO2 whiskers were synthesized using a CVD technique operated under atmospheric pressure. The whiskers were deposited on a Si substrate under the substrate temperature in the range from 650 to 700 C for 120 min. The XRD pattern reveals that the whiskers have a preferred orientation along the < 200 > direction and the presence of the monoclinic structure. The morphology of the HfO2 whiskers indicates that the whisker growth rate increases with the temperature while the whisker density decreases. The HfO2 whiskers were obtained with average growth rates of 0.3 nms-1, 0.6 nms-1 and 0.8 nms-1 corresponding to the substrate temperatures of 650, 680, and 700 C, resp. Excess temperatures introduce the morphological instability of the whisker, such as the dendrite growth. Furthermore, a relatively intense cathodoluminescence emission was observed in the UV regions at RT. 18 refs.