Some properties of very thin Bi2Te3 layers prepared by laser ablation

Thin layers of Bi2Te3 60 nm thickness were prepared by laser ablation in vacuum using KrF excimer laser. The energy of laser varied from 300 to 680 mJ and the laser energy density from 2 to 10 J cm–2. The substrate temperature varied for different depositions in the interval of 20–500 °C. The influence of preparation conditions on Hall mobility, concentration of charge carriers and conductivity at room temperature is presented. Information about morphology and composition of prepared layers is given.