Efficient frequency-domain simulation technique for short-channel MOSFET

This paper proposes and investigates a short-channel MOSFET model down to a 0.1-/spl mu/m regime for the frequency-domain analysis of the device operation through the harmonic balance technique. The efficiency and the preciseness of our method are validated by comparison of simulation results with t...

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Veröffentlicht in:	IEEE transactions on computer-aided design of integrated circuits and systems 2005-06, Vol.24 (6), p.862-868
Hauptverfasser:	Kyu-Il Lee, Chanho Lee, Hyungsoon Shin, Park, Y.J., Hong Shick Min
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models Circuit simulation Computational modeling Frequency domain analysis Harmonic analysis Harmonic balance (HB) technique Harmonic distortion Medical simulation MOSFET circuits nonquasistatic (NQS) effect Semiconductor device modeling short-channel MOSFET Time domain analysis
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Beschreibung
Zusammenfassung:	This paper proposes and investigates a short-channel MOSFET model down to a 0.1-/spl mu/m regime for the frequency-domain analysis of the device operation through the harmonic balance technique. The efficiency and the preciseness of our method are validated by comparison of simulation results with the two-dimensional time-domain simulation tool, MEDICI. Along with the carrier transport model, the displacement current components are included in the terminal current equations for the extended analysis under external circuit environments.
ISSN:	0278-0070 1937-4151
DOI:	10.1109/TCAD.2005.847896