Some details of the electronic structure of tin oxide films

We present experimental results of electronic structure investigations of SnO2 films by X‐ray emission spectroscopy and X‐ray photoelectron spectroscopy methods wherein X‐ray O Kα emission spectra for these materials are reported for the first time. The O 2p electron band shifts toward the upper edge of the valence band when oxygen vacancies increase, but, at the same time, the distance on the binding energy scale from the O 2p band centroid to the Fermi level remains constant. The O 2p valence electron band is broader on the higher binding energy side for oxides having more oxygen vacancies.