SU8 photoresist as an etch mask for local deep anodic etching of silicon

For the formation of an ordered porous structure, the distance between two nearest neighbor pores cannot be more than a certain size, otherwise random nucleated pores arise spontaneously between ordered pores. The “proximity effect” does not allow the production of macropores with variable interpore...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 2003-05, Vol.197 (1), p.150-157
Hauptverfasser:	Starkov, V. V., Gavrilin, E. Yu, Konle, J., Presting, H., Vyatkin, A. F., König, U.
Format:	Artikel
Sprache:	eng
Schlagworte:	61.43.Gt 68.55.Jk 81.65.Cf
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!