Solution-Processed Organic n-Type Thin-Film Transistors

An organic n‐type transistor, where both insulating and active layer were processed from solution, has been produced. As the active layer the C60‐derivative, [6,6]‐phenyl C61‐butyric acid methyl ester (PCBM), was used. Its electron mobility was determined to be as high as μe = 4.5 × 10–3 cm2 V–1 s–1...

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Veröffentlicht in:	Advanced materials (Weinheim) 2003-12, Vol.15 (24), p.2084-2088
Hauptverfasser:	Waldauf, C., Schilinsky, P., Perisutti, M., Hauch, J., Brabec, C.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Field-effect transistors Field‐effect transistors, organic Light-emitting diodes Light‐emitting diodes, organic organic Solution processing Thin films Thin films, organic
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	An organic n‐type transistor, where both insulating and active layer were processed from solution, has been produced. As the active layer the C60‐derivative, [6,6]‐phenyl C61‐butyric acid methyl ester (PCBM), was used. Its electron mobility was determined to be as high as μe = 4.5 × 10–3 cm2 V–1 s–1 when calcium drain/source contacts were used. If these contacts are formed from more air‐stable metals, the device performance decreases.
ISSN:	0935-9648 1521-4095
DOI:	10.1002/adma.200305623