Self-compensation in CdF2 with Schottky barriers

Self-compensation in CdF2 with Schottky barriers

Analysis of capacity–voltage dependencies for CdF2 crystals with Schottky barrier testifies to a strong compensation of donors in the depletion layer. It is proposed that this effect is due to formation at the interface of two-electron Cd0 excitations, which are unstable in CdF2 but diffuse into dep...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2003-12, Vol.340-342, p.953-955
Hauptverfasser: Shcheulin, A.S., Angervaks, A.E., Kupchikov, A.K., Ryskin, A.I.
Format: Artikel
Sprache:eng
Schlagworte:
Excitation
Interface
Schottky barrier
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Zusammenfassung:Analysis of capacity–voltage dependencies for CdF2 crystals with Schottky barrier testifies to a strong compensation of donors in the depletion layer. It is proposed that this effect is due to formation at the interface of two-electron Cd0 excitations, which are unstable in CdF2 but diffuse into depletion layer due to a finite lifetime caused by a potential barrier preventing their instantaneous decay.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2003.09.197