Carbon Quantum Dots with Near‐Unity Quantum Yield Bandgap Emission for Electroluminescent Light‐Emitting Diodes

Carbon quantum dots (CQDs) feature bright and tunable photoluminescence, solution processability, and low toxicity, showing great potential in optoelectronics. However, the large‐scale synthesis of CQDs with near‐unity photoluminescence quantum yield (PLQY) has not been achieved so far. In this study, we perform radical‐assisted synthesis of hexagon‐shaped CQDs (H‐CQDs) delivering near‐unity PLQY (96 %). Experimental and theoretical analyses revealed that the large vertically oriented transition dipole moment of H‐CQDs originating from high symmetry results in nearly 100 % PLQY. The H‐CQDs also exhibited a high electron mobility of up to 0.07 cm2 V−1 s−1. These properties enable the H‐CQD‐based light‐emitting diodes with a high external quantum efficiency of 4.6 % and a record maximum brightness of over 11 000 cd m−2. This study represents a significant advance that CQDs‐based electroluminescent device can be utilized for potential display and lighting applications. We perform radical‐assisted synthesis of hexagon‐shaped carbon quantum dots (H‐CQDs) delivering near‐unity photoluminescence quantum yield as well as a high electron mobility of up to 0.07 cm2 V−1 s−1. The H‐CQD‐based light‐emitting diodes show a high external quantum efficiency of 4.6 % and a record maximum brightness of over 11 000 cd m−2.