Growth evolution of Sr-silicide layers on Si(111) and Mg2Si/Si(111) substrates

Single phase Sr2Si layers were successfully grown on Mg2Si/Si substrates for the first time. The Sr2Si layers are formed by an interdiffusion process between the deposited Sr atoms and Mg2Si/Si substrates. It has been confirmed that the formation of the SrSi and SrSi2 phases was suppressed when the...

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Veröffentlicht in:Thin solid films 2006-06, Vol.508 (1-2), p.74-77
Hauptverfasser: MIURA, Kentaro, OHISHI, Takuya, INABA, Takashi, MIZUYOSHI, Yusuke, TAKAGI, Noriyuki, MATSUYAMA, Takashi, MOMOSE, Yoshimi, KOYAMA, Tadanobu, HAYAKAWA, Yasuhiro, TATSUOKA, Hirokazu
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Sprache:eng
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Zusammenfassung:Single phase Sr2Si layers were successfully grown on Mg2Si/Si substrates for the first time. The Sr2Si layers are formed by an interdiffusion process between the deposited Sr atoms and Mg2Si/Si substrates. It has been confirmed that the formation of the SrSi and SrSi2 phases was suppressed when the layers were grown on Mg2Si/Si substrates. On the other hand, when the layers were grown directly on Si substrates, multiple phase growth took place and the Sr-silicide layers were heavily cracked. The structural properties of the resultant Sr-silicide layers were examined. In addition, the growth evolution of the silicide phases is described.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.06.110