RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

Authors review the results of a study of RF-MBE growth conditions for obtaining high-quality InN films. The FWHMs of w-mode XRD, w-2q mode XRD and E2 (hf)-phonon-mode peaks in the Raman scattering spectrum of the grown layer were 236.7 arcsec, 28.9 arcsec and 3.7 cm-1, resp. The carrier concentration and RT electron mobility were 4.9 x 1018 cm-3 and 1130 cm2/Vs, resp. Photoluminescence and optical absorption measurements of these high-quality InN films have demonstrated that the fundamental band gap of InN is about 0.8 eV. Studies on the growth and characterization of InGaN alloys over the entire alloy composition further supported that the fundamental band gap of InN is about 0.8 eV. 44 refs.