Resonant radiationless excitation transfer in pores of porous silicon

Radiationless resonant electronic excitation transfer from silicon nanocrystals to I2 molecules sorbed in pores of porous silicon was observed. Energy distribution of desorbed I2 molecules was investigated by the time‐of‐flight mass‐spectrometry technique and relatively high kinetic energies (1–3 eV) were detected. It was shown that the mechanism of excitation transfer is satisfactorily described by the Förster model.