Room Temperature-Continuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method

RT-continuous wave (CW) operation of GaInAsP/InP quantum-wire lasers fabricated by electron beam lithography, CH4/H2-reactive ion etching and OMVPE regrowth was realized for the first time. The threshold current density of 802 A/cm2 and differential quantum efficiency of 36% were obtained for a devi...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2003-07, Vol.42 (Part 2, No. 7A), p.L748-L750
Hauptverfasser:	Yagi, Hideki, Sano, Takuya, Ohira, Kazuya, Maruyama, Takeo, Haque, Anisul, Arai, Shigehisa
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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