Room Temperature-Continuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method

RT-continuous wave (CW) operation of GaInAsP/InP quantum-wire lasers fabricated by electron beam lithography, CH4/H2-reactive ion etching and OMVPE regrowth was realized for the first time. The threshold current density of 802 A/cm2 and differential quantum efficiency of 36% were obtained for a device with strain-compensated 5-layered quantum-wires with the wire width of 23 nm in the period of 80 nm, the stripe width of 15 mu m and the cavity length of 1.15 mm. From lifetime measurement under RT-CW condition, no noticeable degradation in light output was observed even after more than 3,200 h. 12 refs.