Optical band gap of Sn0.2Bi1.8Te3 thin films

Optical band gap of Sn0.2Bi1.8Te3 thin films

Sn0.2Bi1.8Te3 thin films were grown using the thermal evaporation technique on a (001) face of NaCl crystal as a substrate at room temperature. The optical absorption was measured in the wave number range 500–4000 cm−1. From the optical absorption data the band gap was evaluated and studied as a fun...

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Veröffentlicht in:Bulletin of materials science 2003-12, Vol.26 (7), p.683-684
Hauptverfasser: Soni, P. H., Hathi, M. V., Desai, C. F.
Format: Artikel
Sprache:eng
Schlagworte:
Absorption
Band gap
Energy gap
Film thickness
Room temperature
Substrates
Thin films
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Zusammenfassung:Sn0.2Bi1.8Te3 thin films were grown using the thermal evaporation technique on a (001) face of NaCl crystal as a substrate at room temperature. The optical absorption was measured in the wave number range 500–4000 cm−1. From the optical absorption data the band gap was evaluated and studied as a function of film thickness and deposition temperature. The data indicate absorption through direct interband transition with a band gap of around 0.216 eV. The detailed results are reported here.
ISSN:0250-4707
0973-7669
DOI:10.1007/BF02706763