Phosphorus-Assisted Low-Energy Arsenic Implantation Technology for N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Source/Drain Formation Process

Authors present P-assisted low-energy As implantation technology for forming n+ source/drain regions. Low-energy As implantation suppresses transient enhanced diffusion of B, and this relieves the reverse short-channel effect. Combined with P implantation, this technology minimizes both the junction-leakage current and the gate polysilicon depletion (polydepletion) effect. A 130-nm-gate-length n-channel MOSFET has been fabricated with this technology, which exhibits improved Ion-Ioff and Vth roll-off characteristics. 6 refs.