Reduction of Stacking Fault Density during SiC Bulk Crystal Growth in the [$11\bar{2}0$] Direction
Stacking fault density was reduced during seeded sublimation growth of SiC single crystals in the [11-20] direction by growing the crystals on a (11-20) seed crystal several degrees off-oriented toward < 0001 > . The density of the basal plane stacking faults decreased from 100-150 cm-1 to app...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2003-03, Vol.42 (Part 2, No. 3B), p.L277-L279 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Stacking fault density was reduced during seeded sublimation growth of SiC single crystals in the [11-20] direction by growing the crystals on a (11-20) seed crystal several degrees off-oriented toward < 0001 > . The density of the basal plane stacking faults decreased from 100-150 cm-1 to approximately 10 cm-1 as the degree of off-orientation was increased. Results indicate that the stacking fault formation is a kinetically induced process, and that the introduction of off-orientation prevents the stacking fault formation through modification of the surface growth kinetics. 9 refs. |
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ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.42.L277 |