Production of Highly Oriented Carbon Nanotube Film by Surface Decomposition of Silicon Carbide Polycrystalline Film

3C-SiC polycrystalline films with preferred [111] orientation were grown on graphite and glassy C substrates by a CVD method using an alternating gas supply. The surface morphology of the SiC (111) film was not affected by the crystal quality or the surface roughness of the substrates. The SiC (111) films on graphite and glassy C substrates were heated at 1973 K for 0.5 approximately equals 4 h at 1.33 x 10-2 Pa. C nanotubes (CNTs) were oriented perpendicular to the graphite and glassy C substrates. The degree of CNT orientation was hardly affected by the crystal quality or the surface roughness of the substrates. Authors can produce highly oriented CNTs on amorphous, polycrystalline or conductive substrates without a catalyst by this fabrication process. 8 refs.