A novel high temperature pressure sensor on the basis of SOI layers

The principle of silicon-on-insulator (SOI) and low pressure chemical vapour deposited (LPCVD) to make the piezoresisitive pressure gauge is developed. A novel structure of the sensors for harsh environment is designed. In particular, the high temperature pressure sensors were used in: automotive in...

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Veröffentlicht in:	Sensors and actuators. A, Physical Physical, 2003-11, Vol.108 (1), p.108-111
Hauptverfasser:	Yulong, Zhao, Libo, Zhao, Zhuangde, Jiang
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology General equipment and techniques Harsh environment Instruments, apparatus, components and techniques common to several branches of physics and astronomy Micro- and nanoelectromechanical devices (mems/nems) Physics Pressure sensor Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing SOI strain gauge
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Beschreibung
Zusammenfassung:	The principle of silicon-on-insulator (SOI) and low pressure chemical vapour deposited (LPCVD) to make the piezoresisitive pressure gauge is developed. A novel structure of the sensors for harsh environment is designed. In particular, the high temperature pressure sensors were used in: automotive industry, aviation engineering, as well as in oil fields, industrial measurement and control systems. The sensor could be used in 200 °C environment, and could endure the impact of instances high temperature (about 1000, and less than 0.5 s) because of it’s mechanical structure of cantilever bonded with SOI strain gauge. The test data of the sensor is obtained, and the result is satisfied.
ISSN:	0924-4247 1873-3069
DOI:	10.1016/j.sna.2003.07.011