Photoluminescence of CdTe crystals grown by physical-vapor transport

High-quality CdTe crystals with resistivities higher than 108 OMEGA cm were grown by the physical-vapor transport (PVT) technique. In, Al, and the transition-metal Sc were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. The emission peaks at 1.584 and 1.581 eV were found only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/In complex. The intensity of the broadband centered at 1.43 eV decreases with introduction of Sc. 26 refs.