PREPARATION OF CuIn1-xGaxSe2 THIN FILMS BY SPUTTERING AND SELENIZATION PROCESS
CuIn1-xGaxSe2 polycrystalline thin films were prepared by a two-step method. The metal precursors were deposited either sequentially or simultaneously using Cu-Ga (23 at%) alloy and In targets by DC magnetron sputtering. The Cu-In-Ga alloy precursor was deposited on glass or on Mo/glass substrates a...
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| Veröffentlicht in: | Solar energy materials and solar cells 2003-01, Vol.75 (1-2), p.145-153 |
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| container_title | Solar energy materials and solar cells |
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| creator | Song, H K Kim, S G Kim, H J Kim, S K Kang, K W Lee, J C Yoon, K H |
| description | CuIn1-xGaxSe2 polycrystalline thin films were prepared by a two-step method. The metal precursors were deposited either sequentially or simultaneously using Cu-Ga (23 at%) alloy and In targets by DC magnetron sputtering. The Cu-In-Ga alloy precursor was deposited on glass or on Mo/glass substrates at either RT or 150 C. These metallic precursors were then selenized with Se pellets in a vacuum furnace. The CuIn1-xGaxSe2 films had a smooth surface morphology and a single chalcopyrite phase. 11 refs. |
| doi_str_mv | 10.1016/S0927-0248(02)00125-3 |
| format | Article |
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The metal precursors were deposited either sequentially or simultaneously using Cu-Ga (23 at%) alloy and In targets by DC magnetron sputtering. The Cu-In-Ga alloy precursor was deposited on glass or on Mo/glass substrates at either RT or 150 C. These metallic precursors were then selenized with Se pellets in a vacuum furnace. The CuIn1-xGaxSe2 films had a smooth surface morphology and a single chalcopyrite phase. 11 refs.</abstract><doi>10.1016/S0927-0248(02)00125-3</doi><tpages>9</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| title | PREPARATION OF CuIn1-xGaxSe2 THIN FILMS BY SPUTTERING AND SELENIZATION PROCESS |
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