PREPARATION OF CuIn1-xGaxSe2 THIN FILMS BY SPUTTERING AND SELENIZATION PROCESS

PREPARATION OF CuIn1-xGaxSe2 THIN FILMS BY SPUTTERING AND SELENIZATION PROCESS

CuIn1-xGaxSe2 polycrystalline thin films were prepared by a two-step method. The metal precursors were deposited either sequentially or simultaneously using Cu-Ga (23 at%) alloy and In targets by DC magnetron sputtering. The Cu-In-Ga alloy precursor was deposited on glass or on Mo/glass substrates a...

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Veröffentlicht in:Solar energy materials and solar cells 2003-01, Vol.75 (1-2), p.145-153
Hauptverfasser: Song, H K, Kim, S G, Kim, H J, Kim, S K, Kang, K W, Lee, J C, Yoon, K H
Format: Artikel
Sprache:eng
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Zusammenfassung:CuIn1-xGaxSe2 polycrystalline thin films were prepared by a two-step method. The metal precursors were deposited either sequentially or simultaneously using Cu-Ga (23 at%) alloy and In targets by DC magnetron sputtering. The Cu-In-Ga alloy precursor was deposited on glass or on Mo/glass substrates at either RT or 150 C. These metallic precursors were then selenized with Se pellets in a vacuum furnace. The CuIn1-xGaxSe2 films had a smooth surface morphology and a single chalcopyrite phase. 11 refs.
ISSN:0927-0248
DOI:10.1016/S0927-0248(02)00125-3