Preparation of ferroelectric Pb(Zr0.5,Ti0.5)O3 thin films by sol–gel process: dielectric and ferroelectric properties

Ferroelectric lead zirconium titanate (Pb(Z0.5,Ti0.5)O3) thin films were prepared by sol–gel spin coating technique. Three-step pre-annealing heat treatment was employed to prepare crack-free films. Phase-pure perovskite crystallization was obtained by annealing the films on Pt/Ti/Corning 7059 glass...

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Veröffentlicht in:Materials letters 2003-04, Vol.57 (13-14), p.2007-2014
Hauptverfasser: Thomas, Reji, Mochizuki, Shoichi, Mihara, Toshiyuki, Ishida, Tadashi
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Sprache:eng
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Zusammenfassung:Ferroelectric lead zirconium titanate (Pb(Z0.5,Ti0.5)O3) thin films were prepared by sol–gel spin coating technique. Three-step pre-annealing heat treatment was employed to prepare crack-free films. Phase-pure perovskite crystallization was obtained by annealing the films on Pt/Ti/Corning 7059 glass substrates at 550 °C. Films were having fine-grained microstructure with average grain size of the order of 20 nm. Resistivity of the 0.54-μm-thick film was the order of 1010 Ω cm at 15 V. Dielectric constant and loss tangent at 10 kHz were in the range 1000–1250 and 0.04–0.077, respectively. Remanent polarization (Pr) and coercive field (Ec) were in the range 26–29 μC/cm2 and 49–58 kV/cm, respectively.
ISSN:0167-577X
1873-4979
DOI:10.1016/S0167-577X(02)01130-8