Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA
Si(1 0 0) and (1 1 1) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV 19F + ions, to a maximum fluence of approximately 1×10 17 particles/cm 2. The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis...
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| Veröffentlicht in: | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2003-04, Vol.201 (4), p.623-629 |
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| container_title | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms |
| container_volume | 201 |
| creator | Kokkoris, M. Perdikakis, G. Vlastou, R. Papadopoulos, C.T. Aslanoglou, X.A. Posselt, M. Grötzschel, R. Harissopulos, S. Kossionides, S. |
| description | Si(1
0
0) and (1
1
1) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV
19F
+ ions, to a maximum fluence of approximately 1×10
17 particles/cm
2. The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis technique in the energy range
E
p=950–1200 keV. The reaction
19F(p,αγ)
16O reaction exhibits a strong resonant behavior in the above mentioned energy range, thus providing an excellent tool for the depth profiling of fluorine, yielding minimum detection limits of the order of a few ppm. The occurring profiles are analyzed with SRIM and c-TRIM codes and an attempt is made to explain the characteristics of the experimental spectra, as well as to compare with results already existing in literature. |
| doi_str_mv | 10.1016/S0168-583X(03)00448-8 |
| format | Article |
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0
0) and (1
1
1) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV
19F
+ ions, to a maximum fluence of approximately 1×10
17 particles/cm
2. The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis technique in the energy range
E
p=950–1200 keV. The reaction
19F(p,αγ)
16O reaction exhibits a strong resonant behavior in the above mentioned energy range, thus providing an excellent tool for the depth profiling of fluorine, yielding minimum detection limits of the order of a few ppm. The occurring profiles are analyzed with SRIM and c-TRIM codes and an attempt is made to explain the characteristics of the experimental spectra, as well as to compare with results already existing in literature.</description><identifier>ISSN: 0168-583X</identifier><identifier>EISSN: 1872-9584</identifier><identifier>DOI: 10.1016/S0168-583X(03)00448-8</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>c-TRIM ; Channeling ; Fluorine profiling ; High-energy implantation ; Nuclear resonance ; Resonant NRA</subject><ispartof>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-04, Vol.201 (4), p.623-629</ispartof><rights>2003 Elsevier Science B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-4c90935c1f9e995f9855f287d3c9a3fe84a16adf201824037407fdc1a1589d933</citedby><cites>FETCH-LOGICAL-c338t-4c90935c1f9e995f9855f287d3c9a3fe84a16adf201824037407fdc1a1589d933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0168-583X(03)00448-8$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Kokkoris, M.</creatorcontrib><creatorcontrib>Perdikakis, G.</creatorcontrib><creatorcontrib>Vlastou, R.</creatorcontrib><creatorcontrib>Papadopoulos, C.T.</creatorcontrib><creatorcontrib>Aslanoglou, X.A.</creatorcontrib><creatorcontrib>Posselt, M.</creatorcontrib><creatorcontrib>Grötzschel, R.</creatorcontrib><creatorcontrib>Harissopulos, S.</creatorcontrib><creatorcontrib>Kossionides, S.</creatorcontrib><title>Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA</title><title>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</title><description>Si(1
0
0) and (1
1
1) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV
19F
+ ions, to a maximum fluence of approximately 1×10
17 particles/cm
2. The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis technique in the energy range
E
p=950–1200 keV. The reaction
19F(p,αγ)
16O reaction exhibits a strong resonant behavior in the above mentioned energy range, thus providing an excellent tool for the depth profiling of fluorine, yielding minimum detection limits of the order of a few ppm. The occurring profiles are analyzed with SRIM and c-TRIM codes and an attempt is made to explain the characteristics of the experimental spectra, as well as to compare with results already existing in literature.</description><subject>c-TRIM</subject><subject>Channeling</subject><subject>Fluorine profiling</subject><subject>High-energy implantation</subject><subject>Nuclear resonance</subject><subject>Resonant NRA</subject><issn>0168-583X</issn><issn>1872-9584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWKs_QchJ9LCabDbd5CSl-FEoCn6AeAkhO6mRbbImuwX_vWkrXp3DzGHed5j3QeiUkktK6OTqOTdRcMHezgm7IKSqRCH20IiKuiwkF9U-Gv1JDtFRSp8kF2d8hN7nfg2pd0vdu-BxsLgB6LBbda32PTTYtkOIzgM2H9p7aJ1f4i4G61pI2HmcXOtMdg5ps4mQgs9G_PA0PUYHVrcJTn7nGL3e3rzM7ovF4918Nl0UhjHRF5WRRDJuqJUgJbdScG5LUTfMSM0siErTiW5sSagoK8LqitS2MVRTLmQjGRujs93d_NbXkMOolUsG2hwAwpBUWctyMhEyC_lOaGJIKYJVXXQrHb8VJWpDUm1Jqg0mRZjaklQi-653Psgp1g6iSsaBN9C4CKZXTXD_XPgBw6B8Dw</recordid><startdate>20030401</startdate><enddate>20030401</enddate><creator>Kokkoris, M.</creator><creator>Perdikakis, G.</creator><creator>Vlastou, R.</creator><creator>Papadopoulos, C.T.</creator><creator>Aslanoglou, X.A.</creator><creator>Posselt, M.</creator><creator>Grötzschel, R.</creator><creator>Harissopulos, S.</creator><creator>Kossionides, S.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20030401</creationdate><title>Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA</title><author>Kokkoris, M. ; Perdikakis, G. ; Vlastou, R. ; Papadopoulos, C.T. ; Aslanoglou, X.A. ; Posselt, M. ; Grötzschel, R. ; Harissopulos, S. ; Kossionides, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-4c90935c1f9e995f9855f287d3c9a3fe84a16adf201824037407fdc1a1589d933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>c-TRIM</topic><topic>Channeling</topic><topic>Fluorine profiling</topic><topic>High-energy implantation</topic><topic>Nuclear resonance</topic><topic>Resonant NRA</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kokkoris, M.</creatorcontrib><creatorcontrib>Perdikakis, G.</creatorcontrib><creatorcontrib>Vlastou, R.</creatorcontrib><creatorcontrib>Papadopoulos, C.T.</creatorcontrib><creatorcontrib>Aslanoglou, X.A.</creatorcontrib><creatorcontrib>Posselt, M.</creatorcontrib><creatorcontrib>Grötzschel, R.</creatorcontrib><creatorcontrib>Harissopulos, S.</creatorcontrib><creatorcontrib>Kossionides, S.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kokkoris, M.</au><au>Perdikakis, G.</au><au>Vlastou, R.</au><au>Papadopoulos, C.T.</au><au>Aslanoglou, X.A.</au><au>Posselt, M.</au><au>Grötzschel, R.</au><au>Harissopulos, S.</au><au>Kossionides, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA</atitle><jtitle>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</jtitle><date>2003-04-01</date><risdate>2003</risdate><volume>201</volume><issue>4</issue><spage>623</spage><epage>629</epage><pages>623-629</pages><issn>0168-583X</issn><eissn>1872-9584</eissn><abstract>Si(1
0
0) and (1
1
1) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV
19F
+ ions, to a maximum fluence of approximately 1×10
17 particles/cm
2. The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis technique in the energy range
E
p=950–1200 keV. The reaction
19F(p,αγ)
16O reaction exhibits a strong resonant behavior in the above mentioned energy range, thus providing an excellent tool for the depth profiling of fluorine, yielding minimum detection limits of the order of a few ppm. The occurring profiles are analyzed with SRIM and c-TRIM codes and an attempt is made to explain the characteristics of the experimental spectra, as well as to compare with results already existing in literature.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S0168-583X(03)00448-8</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0168-583X |
| ispartof | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-04, Vol.201 (4), p.623-629 |
| issn | 0168-583X 1872-9584 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27926689 |
| source | Access via ScienceDirect (Elsevier) |
| subjects | c-TRIM Channeling Fluorine profiling High-energy implantation Nuclear resonance Resonant NRA |
| title | Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA |
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