Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA

Si(1 0 0) and (1 1 1) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV 19F + ions, to a maximum fluence of approximately 1×10 17 particles/cm 2. The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis technique in the energy range E p=950–1200 keV. The reaction 19F(p,αγ) 16O reaction exhibits a strong resonant behavior in the above mentioned energy range, thus providing an excellent tool for the depth profiling of fluorine, yielding minimum detection limits of the order of a few ppm. The occurring profiles are analyzed with SRIM and c-TRIM codes and an attempt is made to explain the characteristics of the experimental spectra, as well as to compare with results already existing in literature.