The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide

The n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on cubic SiC (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100 C. The 3C-SiC MOSFETs showed enhancement type behaviors after annea...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2003-06, Vol.42 (Part 2, No. 6B), p.L625-L627
Hauptverfasser:	Ohshima, Takeshi, Lee, Kin Kiong, Ishida, Yuuki, Kojima, Kazutoshi, Tanaka, Yasunori, Takahashi, Tetsuo, Yoshikawa, Masahito, Okumura, Hajime, Arai, Kazuo, Kamiya, Tomihiro
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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